cys tech electronics corp. s pec. no. : 794 y3 issued date : 20 1 1.12.22 revised date : page no. : 1/ 8 mtp3lp01 y 3 c y s t ek product s pecification 30v p-channel enhancement mode mosfet bv dss -30v MTP3LP01Y3 i d -230ma features ? ultra high speed switching. ? low gate charge. ? 2.5v drive. ? pb-free package lead plating and halogen-free package. equivalent circuit outline absolute maximum ratings (t a =25 c, unless otherwise noted) parameter symbol limits unit drain-source v o ltage v ds -30 v gate-source voltage v gs 10 v continuous drain current i d -230 ma pulsed drain current (note 1) i dm -920 ma maximum power dissipation (note 2) p d 150 mw thermal resistance, junction-to-ambient r th,ja 833 c/w operating junction and storage temperature tj, tstg -55~+150 c note : 1 . pulse width 10 s, duty cy cl e 1%. 2. when mounted on a g l ass epox y with a dimension of 10 0mm2 1mm . MTP3LP01Y3 sot-723 3 @-4v 4.6 @-2.5v r dson(typ) 10.9 @-1.5v d g gate s source d drain s g http://
cys tech electronics corp. s pec. no. : 794 y3 issued date : 20 1 1.12.22 revised date : page no. : 2/ 8 mtp3lp01 y 3 c y s t ek product s pecification electrical characteristics (ta=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss -30 - - v v gs =0v, i d =-250 a v gs(th) -0.6 0.9 -1.1 v v ds =-10v, i d =-100 a g fs 100 210 - ms v ds =-10v, i d =-100ma i gss - - 1 a v gs = 8v, v ds =0 - - -1 v ds =-30v, v gs =0 i dss - - -10 a v ds =-24v, v gs =0; tj=125 c - 3 5 v gs =-4v, i d =-100ma - 4.6 8 v gs =-2.5v, i d =-30ma *r ds(o n) - 10.9 18 v gs =-1.5v, i d =-1ma dynamic ciss - 35.7 - coss - 11.9 - crss - 3.7 - pf v ds =-20v, v gs =0, f=1mhz *t d(on) - 26.4 - *t r - 12.8 - *t d(off) - 31.5 - *t f - 46.4 - ns v ds =-15v, i d =-100ma, v gs =-4v, r l =150 , r g =50 *qg - 0.78 - *qgs - 0.1 - *qgd - 0.1 - nc v ds =-10v, i d =-100ma, v gs =-10v source-drain diode *i s - - -230 *i sm - - -920 ma *v sd - 0.83 -1.2 v v gs =0v, i s =-100ma *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping marking MTP3LP01Y3 sot-723 (pb-free lead plating an d halogen-free package) 8000 pcs / tape & reel ab
cys tech electronics corp. s pec. no. : 794 y3 issued date : 20 1 1.12.22 revised date : page no. : 3/ 8 mtp3lp01 y 3 c y s t ek product s pecification typical characteristics (the minus sign in voltage and current is omitted) t y pi c a l o ut put c ha ra c t e r i s t i c s 0 0. 05 0. 1 0. 15 0. 2 0. 25 0. 3 00 . 5 11 . 5 2 d ra i n -s o u rc e v o l t a g e ---v ds (v ) d ra i n c u r re n t --- i d (a ) v gs =1.5v 6v 2 v 2.5v 3v 3.5v t a =25c 4v ty p i cal tr a n s f e r c h ar act er is tic s 0 50 10 0 15 0 20 0 0 0 .5 1 1 .5 2 2 .5 3 g a t e - s o u r ce v o lt ag e- v gs (v ) d ra i n c u rr e n t -i d (a ) v ds =10v 75c 25c 125c s t at i c d r ai n - s o u r ce o n - s t at e r es i s t a n ce v s g at e- s o u r ce vo l t a g e 0 2 4 6 8 10 02 4 68 1 0 g a t e - s our c e v ol t a ge - v g s ( v ) static drain-source on-state resistance-r ds( on) () t a =75c t a =125c t a =25c i d =30ma s ta tic d r a in - s o u r c e o n - s ta te r e s is t a n c e v s g a te - s o u r c e v o lta g e 0 2 4 6 8 10 02 4 6 8 1 0 g a t e - s o u r ce v o lt ag e- v gs (v ) sta t ic d r a in - s o u r c e o n - s ta t e r e si st a n c e - r ds ( on) ( ) t a =75c t a =125c t a =25c i d =50ma s ta t ic d r a in - s o u r c e o n - s t a te r e s is ta n c e v s d r a i n c u r r e n t 1 10 10 0 0. 1 1 1 0 d r a i n c u rre n t -i d (ma ) sta t ic d r a in - s o u r c e o n - s ta t e r e s is ta n c e - r d s ( on) ( ) t a =125c t a =75c t a =25c v gs =1.5v s ta tic d r a in - s o u r c e o n - s ta te r e s i s t a n c e v s d r a in cu r r e n t 1 10 100 1 10 100 dr a i n c u r r e n t - i d (ma ) s ta tic d r a in - s o u r c e o n - s ta te r e s is t a n c e - r d s ( on) ( ) t a =75c t a =25c t a =125c v gs =2.5v
cys tech electronics corp. s pec. no. : 794 y3 issued date : 20 1 1.12.22 revised date : page no. : 4/ 8 mtp3lp01 y 3 c y s t ek product s pecification typical characteristics(cont.) s t a t i c d r a i n- s our c e o n- s t a t e r e s i s t a nc e v s d r a i n c ur r e nt 1 10 1 10 100 1000 d r a i n c u rre n t -id ( m a ) s t a t i c dra i n -s o u rc e on -s t a t e r e s i s t a n c e - r d s (o n )( ) t a =125c t a =75c t a =25c v gs =4v s t a ti c d r a i n - s o u r c e o n - s ta te r e s i s ta n c e v s a m b ie n t t em p er at u r e 0 2 4 6 8 10 0 50 100 150 a m b i en t t e m p er atu r e - t a ( c ) s ta tic d r a in - s o u r c e o n - s t a te r e si st a n c e - r d s ( on) ( ) i d =50ma, v gs =4v i d =30ma, v gs =2.5v r e v e r s e d r ai n c u r r e n t v s s o u r ce- d r ain v o lt ag e 0 0. 2 0. 4 0. 6 0. 8 1 1. 2 0. 1 1 1 0 100 10 00 re v e r s e d r a i n c u r r e nt - i dr (ma ) s o urc e -d ra i n v ol t a g e -v sd (v ) t a =125c t a =25c t a =75c v gs =0v c a p aci ta n c e v s d r a i n - t o - s o u r ce v o lt ag e 1 10 100 0 5 10 15 2 0 25 30 d r ain - s o u r ce v o lt ag e - v ds (v ) c a p a c i t a n c e ---(p f ) c oss ciss crss f=1mhz f or w a r d t r a n s f e r a dm i t t a nc e vs d r a i n c ur r e nt 10 100 1000 10 10 0 1000 d r a i n c u rre n t -i d (ma ) f o r w ar d t r an s f er a d m i t t an ce- - - g fs (m s ) t a =125c t a =25c t a =75c b r e k dow n v o l t a ge vs a m b i e n t t e m pe r a t ur e 30 35 40 45 - 10 0 - 5 0 0 5 0 1 00 150 200 a m b i en t t em p er at u r e - t j ( c ) d r ai n - s o u r ce b r eak d o w n v o l t ag e bv ds s (v ) i d =250a, v gs =0v
cys tech electronics corp. s pec. no. : 794 y3 issued date : 20 1 1.12.22 revised date : page no. : 5/ 8 mtp3lp01 y 3 c y s t ek product s pecification typical characteristics(cont.) s t a t i c d ra i n -s o u rc e on -r e s i s t a n c e v s am b i e n t t e m p e ra t u r e 0 1 2 3 4 5 6 - 100 - 50 0 50 1 00 1 50 2 00 a m b i en t t em p e r at u r e - t a( c ) s ta tic d r a in - s o u r c e o n - s t a te re s i s t a n c e - r ds ( o n ) ( ) i d =100ma, v gs =4v g a t e c h a r g e c h ar a c te r i s t ics 0 1 2 3 4 5 6 7 8 9 10 0 0 . 1 0 .2 0 .3 0 . 4 0 .5 0 .6 0 .7 0 .8 t o ta l g a te c h a r g e - - - q g ( n c) g at e - s o u r ce v o l t ag e - - - v gs (v ) v ds =10v, i d =100ma p o w e r d e r a t i ng c ur ve 0 20 40 60 80 10 0 12 0 14 0 16 0 0 50 100 150 200 a m b i en t t em p er a t u r e- - - t a ( ) p o w e r d i s s i p a t i on ---p d (mw )
cys tech electronics corp. s pec. no. : 794 y3 issued date : 20 1 1.12.22 revised date : page no. : 6/ 8 mtp3lp01 y 3 c y s t ek product s pecification reel dimension carrier tape dimension
cys tech electronics corp. s pec. no. : 794 y3 issued date : 20 1 1.12.22 revised date : page no. : 7/ 8 mtp3lp01 y 3 c y s t ek product s pecification recommended wave soldering condition product peak temperature soldering time pb-free devices 5 +1/-1 seconds 260 +0/-5 c recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cys tech electronics corp. s pec. no. : 794 y3 issued date : 20 1 1.12.22 revised date : page no. : 8/ 8 mtp3lp01 y 3 c y s t ek product s pecification sot-723 dimension style: pin 1.gate 2.source 3.drain 3-l ead sot - 723 plasti c surface mou n ted packa g e cys t ek pa ckage code: y3 marking: ab *typical millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 0.000 0.500 0.000 0.020 d 1. 150 1.250 0.045 0.049 a1 0.000 0.050 0.000 0.002 e 1.150 1.250 0.045 0.049 b 0.170 0.270 0.007 0.011 e1 0.750 0.850 0.030 0.033 b1 0.270 0.370 0.011 0.015 e 0.800* 0.031* c 0.000 0.150 0.000 0.006 7 ref 7 ref notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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